This article investigates theoretically electronic properties of radial type 1 p-n heterojunction in core-shell nanowire when doping level of the wide-gap layer is significantly higher than that of the narrow-gap one. The investigation takes into account contribution of excess free minority carriers into space charge of the narrow-gap part of the junction. By example of strongly asymmetric p+- n heterojunction, it is shown that contribution of free minority carriers (as distinct from contribution of free majority ones) results in increase (rather than decrease) in both width of space charge region and built-in potential of the junction. This is important for electronics of photovoltaic devices. Value of the effect depends on p+- n junction radius.
Keywords: Built-In Potential, Core-Shell Nanowire, Depletion Width, Energy Band Structure, Radial P-N Heterojunction, Space Charge.
Citation: Borblik, V. L. (2026). Concerning Built-In Potential of a Radial Asymmetrically Doped p-n Heterojunction in Core-Shell Nanowire. I J T C Physics, 7(1):1-6.
DOI : https://doi.org/10.47485/2767-3901.1068